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HiPerFASTTM IGBT ISOPLUS247TM
VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ)
= 600 V = 75 A = 2.5 V = 85 ns
(D1)
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 75 45 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W C C C C V g
ISOPLUS 247 E153432
G
C
E
Isolated Backside*
G = Gate, E = Emitter
C = Collector
* Patent pending
Features DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight Symbol Test Conditions 50/60 Hz, RMS, t = 1minute leads-to-tab
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 50N60B 50N60BD1 2.5 2.5 5.0 5.0 200 650 1 5 100 2.5 V V A A mA mA nA V
VGE(th) ICES
IC IC
= 250 A, VCE = VGE = 500 A
VCE = 600V VGE = 0 V
50N60B 50N60BD1 50N60B TJ = 125C 50N60BD1
IGES VCE(sat)
VCE = 0 V, VGE = 20 V IC = IT, VGE = 15 V
(c) 2004 IXYS All rights reserved
DS98730C(06/04)
IXGR 50N60B IXGR 50N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 4100 VCE = 25 V, VGE = 0 V, f = 1 MHz 300 50 110 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IT, VGE = 15 V, L = 100uH VCE = 0.8 * VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V, L = 100uH VCE = 0.8 * VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30 35 50 50 110 85 3.0 50 60 3 200 250 4.2 0.5 0.15 270 150 4.0 S pF pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 OUTLINE
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IT; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Note: IT,= 50A Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 2.5 3.2 35 V V A ns ns 0.85 K/W
IF = IT, VGE = 0 V, TJ = 150C Pulse test, t 300 ms, duty cycle 2 % IF = IT, VGE = 0 V, -diF/dt = 100 A/ms,TJ = 100C V R = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXGR 50N60B IXGR 50N60BD1
100
T J = 25C VGE = 15V 13V 11V 9V
200 160
T J = 25C
80
V GE = 15V 13V
11V
9V
IC - Amperes
60 40 20
5V
IC - Amperes
7V
120 80 40
5V 7V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
100 80
1.6
9V
Fig. 2. Extended Output Characteristics
VCE (sat) - Normalized
T J = 125C V = 15V GE 13V 11V
V GE = 15V
1.4 1.2 1.0
IC = 25A IC = 50A
IC = 100A
IC - Amperes
60 40
7V
0.8 0.6 0.4 25
5V
20 0
0
1
2
3
4
5
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
100
VCE = 10V
Fig. 4. Temperature Dependence of VCE(sat)
10000
f = 1Mhz Ciss
80
Capacitance - pF
IC - Amperes
60 40
T J = 125C TJ = 25C
1000
100
Coss Crss
20 0
10
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
VGE - Volts
VCE-Volts
Fig. 5. Saturation Voltage Characteristics
Fig. 6. Junction Capacitance Curves
(c) 2004 IXYS All rights reserved
IXGR 50N60B IXGR 50N60BD1
6
TJ = 125C
12
RG = 4.7
E(ON)
6 5
TJ = 125C E(ON) IC = 100A E(OFF)
12 10
5
E(ON) - millijoules
10
E(OFF) - milliJoules
E(OFF) - millijoules
4 3 2 1 0
0 20 40 60 80
8 6 4 2 0 100
E(ON) - millijoules
4 3
E(ON)
8 6
E(OFF)
IC = 50A E(OFF)
2 1 0
E(OFF) E(ON) IC =25A
4 2 0 60
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
20
Fig. 8. Dependence of tfi and EOFF on RG.
600
100
IC =50A VCE = 250V
15
IC - Amperes
VGE - Volts
10
10
TJ = 125C
RG = 5.2 dV/dt < 5V/ns
5
1
0
0.1 0 50 100 150 200 250 300
0
100
200
300
400
500
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
Fig. 10. Turn-off Safe Operating Area
ZthJC (K/W)
0.1
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. IGBT Transient Thermal Resistance
IXGR 50N60B IXGR 50N60BD1
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4000 nC
TVJ= 100C VR = 300V
80 A
TVJ= 100C VR = 300V
TVJ= 25C TVJ=100C
3000 Qr 2000
IF=120A IF= 60A IF= 30A
60 IRM 40
TVJ=150C
1000 20
IF=120A IF= 60A IF= 30A
Fig. 12 Forward current IF versus VF
2.0
Fig. 13 Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 14 Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
IRM
100 0.5
IF=120A IF= 60A IF= 30A
tfr
10
V FR
1.2
0.8
Qr
5 90 80 0
0.4
0.0
TVJ= 100C IF = 60A
0 200 400
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399
0.001
0.0001 0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s t
1
Fig. 18 Transient thermal resistance junction to case
(c) 2004 IXYS All rights reserved

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